USING TRENCHFET Gen III silicon, the Si4628DY SkyFET from Vishay Intertechnology offers a maximum RDS(ON) of 3 m at a 10-V gate drive and 3.8 m at 4.5 USING TRENCHFET® Gen III silicon, the Si4628DY ...
Extending the capability to support redundancy power systems with rail voltages up to ±400V, the ZXGD3112N7 active OR’ing MOSFET controller introduced by Diodes Incorporated, builds on a successful ...
Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
Taiwan-based Panjit International will exhibit its silicon carbide (SiC) diodes and medium-voltage MOSFETs at Electronica China in Shanghai, which will be held July 11-13. Save my User ID and Password ...
The DGD0506 and DGD0507 high-frequency gate-driver ICs introduced by Diodes Incorporated are designed for driving two external N-channel MOSFETs in a half-bridge configuration. A 50V rating suits a ...
NANJING, China--(BUSINESS WIRE)--Today, SMC Diode Solutions, an American-led semiconductor design and manufacturing company, celebrated the opening of its second power discrete fab in Nanjing, China.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback